Pushing EUV lithography development beyond 22-nm half pitch Metadata

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Title

  • Main Title Pushing EUV lithography development beyond 22-nm half pitch

Creator

  • Author: Naulleau, Patrick
    Creator Type: Personal
  • Author: Anderson, Christopher N.
    Creator Type: Personal
  • Author: Baclea-an, Lorie-Mae
    Creator Type: Personal
  • Author: Denham, Paul
    Creator Type: Personal
  • Author: George, Simi
    Creator Type: Personal
  • Author: Goldberg, Kenneth A.
    Creator Type: Personal
  • Author: Goldstein, Michael
    Creator Type: Personal
  • Author: Hoef, Brian
    Creator Type: Personal
  • Author: Jones, Gideon
    Creator Type: Personal
  • Author: Koh, Chawon
    Creator Type: Personal
  • Author: La Fontaine, Bruno
    Creator Type: Personal
  • Author: Montogomery, Warren
    Creator Type: Personal
  • Author: Wallow, Tom
    Creator Type: Personal

Contributor

  • Sponsor: Lawrence Berkeley Laboratory. Materials and Molecular Research Division.
    Contributor Type: Organization
    Contributor Info: Materials Sciences Division

Publisher

  • Name: Lawrence Berkeley National Laboratory
    Place of Publication: Berkeley, California
    Additional Info: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States)

Date

  • Creation: 2009-06-30

Language

  • English

Description

  • Content Description: Microfield exposure tools (METs) have and continue to play a dominant role in the development of extreme ultraviolet (EUV) resists and masks. One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET. Here we investigate the possibilities and limitations of using the 0.3-NA MET for sub-22-nm half-pitch development. We consider mask resolution limitations and present a method unique to the centrally obscured MET allowing these mask limitations to be overcome. We also explore projection optics resolution limits and describe various illumination schemes allowing resolution enhancement. At 0.3-NA, the 0.5 k1 factor resolution limit is 22.5 nm meaning that conventional illumination is of limited utility for sub-22-nm development. In general resolution enhancing illumination encompasses increased coherence. We study the effect of this increased coherence on line-edge roughness, which along with resolution is another crucial factor in sub-22-nm resist development.
  • Physical Description: 20

Subject

  • Keyword: Euv Lithography
  • Keyword: Apertures
  • STI Subject Categories: 36
  • Keyword: Roughness Euv Lithography
  • Keyword: Illuminance
  • Keyword: Resolution
  • Keyword: Optics

Source

  • Journal Name: Journal of Vacuum Science and Technology B

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: LBNL-2288E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 971185
  • Archival Resource Key: ark:/67531/metadc931446
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