Pushing EUV lithography development beyond 22-nm half pitch

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Microfield exposure tools (METs) have and continue to play a dominant role in the development of extreme ultraviolet (EUV) resists and masks. One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET. Here we investigate the possibilities and limitations of using the 0.3-NA MET for sub-22-nm half-pitch development. We consider mask resolution limitations and present a method unique to the centrally obscured MET allowing these mask limitations to be overcome. We also explore projection optics resolution limits and describe various illumination schemes allowing resolution enhancement. At 0.3-NA, the 0.5 k1 factor resolution limit is 22.5 nm meaning ... continued below

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Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A. et al. June 30, 2009.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 12 times , with 10 in the last month . More information about this article can be viewed below.

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Description

Microfield exposure tools (METs) have and continue to play a dominant role in the development of extreme ultraviolet (EUV) resists and masks. One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET. Here we investigate the possibilities and limitations of using the 0.3-NA MET for sub-22-nm half-pitch development. We consider mask resolution limitations and present a method unique to the centrally obscured MET allowing these mask limitations to be overcome. We also explore projection optics resolution limits and describe various illumination schemes allowing resolution enhancement. At 0.3-NA, the 0.5 k1 factor resolution limit is 22.5 nm meaning that conventional illumination is of limited utility for sub-22-nm development. In general resolution enhancing illumination encompasses increased coherence. We study the effect of this increased coherence on line-edge roughness, which along with resolution is another crucial factor in sub-22-nm resist development.

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  • Journal Name: Journal of Vacuum Science and Technology B

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  • Report No.: LBNL-2288E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 971185
  • Archival Resource Key: ark:/67531/metadc931446

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • June 30, 2009

Added to The UNT Digital Library

  • Nov. 13, 2016, 7:26 p.m.

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  • Oct. 2, 2017, 5:34 p.m.

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Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A. et al. Pushing EUV lithography development beyond 22-nm half pitch, article, June 30, 2009; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc931446/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.