Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

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Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films ... continued below

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Hawley, Marilyn E; Biegalski, Michael D & Schlom, Darrell G January 1, 2008.

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Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700{sup o}C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

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  • Journal Name: Journal of Applied Physics; Journal Volume: 104; Journal Issue: 11

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  • Report No.: LA-UR-08-07983
  • Report No.: LA-UR-08-7983
  • Grant Number: AC52-06NA25396
  • Office of Scientific & Technical Information Report Number: 956658
  • Archival Resource Key: ark:/67531/metadc931256

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  • January 1, 2008

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  • Nov. 13, 2016, 7:26 p.m.

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  • Dec. 12, 2016, 5:46 p.m.

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Hawley, Marilyn E; Biegalski, Michael D & Schlom, Darrell G. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3, article, January 1, 2008; [New Mexico]. (digital.library.unt.edu/ark:/67531/metadc931256/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.