Defect Measurements of CdZnTe Detectors Using I-DLTS, TCT, I-V and Gamma-ray Spectroscopy

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In this work we measured the crystal defect levels and tested the performance of CdZnTe detectors by diverse methodologies, viz., Current Deep Level Transient Spectroscopy (I-DLTS), Transient Current Technique (TCT), Current and Capacitance versus Voltage measurements (I-V and C-V), and gamma-ray spectroscopy. Two important characteristics of I-DLTS technique for advancing this research are (1) it is applicable for high-resistivity materials (>10{sup 6} {Omega}-cm), and, (2) the minimum temperature for measurements can be as low as 10 K. Such low-temperature capability is excellent for obtaining measurements at shallow levels. We acquired CdZnTe crystals grown by different techniques from two different vendors ... continued below

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Gul,R. August 11, 2008.

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In this work we measured the crystal defect levels and tested the performance of CdZnTe detectors by diverse methodologies, viz., Current Deep Level Transient Spectroscopy (I-DLTS), Transient Current Technique (TCT), Current and Capacitance versus Voltage measurements (I-V and C-V), and gamma-ray spectroscopy. Two important characteristics of I-DLTS technique for advancing this research are (1) it is applicable for high-resistivity materials (>10{sup 6} {Omega}-cm), and, (2) the minimum temperature for measurements can be as low as 10 K. Such low-temperature capability is excellent for obtaining measurements at shallow levels. We acquired CdZnTe crystals grown by different techniques from two different vendors and characterized them for point defects and their response to photons. I-DLTS studies encompassed measuring the parameters of the defects, such as the energy levels in the band gap, the carrier capture cross-sections and their densities. The current induced by the laser-generated carriers and the charge collected (or number of electrons collected) were obtained using TCT that also provides the transport properties, such as the carrier life time and mobility of the detectors under study. The detector's electrical characteristics were explored, and its performance tested using I-V, C-V and gamma-ray spectroscopy.

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  • 2008 SPIE Conference; San Diego, CA; 20080811 through 20080814

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  • Report No.: BNL--82063-2009-CP
  • Grant Number: DE-AC02-98CH10886
  • Office of Scientific & Technical Information Report Number: 950009
  • Archival Resource Key: ark:/67531/metadc931179

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  • August 11, 2008

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  • Nov. 13, 2016, 7:26 p.m.

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  • Sept. 25, 2017, 3:16 p.m.

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Gul,R. Defect Measurements of CdZnTe Detectors Using I-DLTS, TCT, I-V and Gamma-ray Spectroscopy, article, August 11, 2008; United States. (digital.library.unt.edu/ark:/67531/metadc931179/: accessed December 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.