The effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer

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Mask contributors to line-edge roughness (LER) have recently been shown to be an issue of concern for both the accuracy of current resist evaluation tests as well the ultimate LER requirements for the 22-nm production node. More recently, it has been shown that the power spectral density of the mask-induced roughness, is markedly different than that of intrinsic resist roughness and thus potentially serves as a mechanism for distinguishing mask effects from resist effects in experimental results. Further considering stochastic resist effects, however, demonstrates that such a test would only be viable in cases where the resist effects are completely ... continued below

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Naulleau, Patrick & Gallatin, Gregg May 1, 2009.

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Mask contributors to line-edge roughness (LER) have recently been shown to be an issue of concern for both the accuracy of current resist evaluation tests as well the ultimate LER requirements for the 22-nm production node. More recently, it has been shown that the power spectral density of the mask-induced roughness, is markedly different than that of intrinsic resist roughness and thus potentially serves as a mechanism for distinguishing mask effects from resist effects in experimental results. Further considering stochastic resist effects, however, demonstrates that such a test would only be viable in cases where the resist effects are completely negligible in terms of their contribution to the total LER compared to the mask effects. The results presented here lead us to the surprising conclusion that it is indeed possible for mask contributors to be the dominant source of LER while the spatial characteristics of the LER remain indistinguishable from the fractal characteristics of resist-induced LER.

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  • Journal Name: JVST B

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  • Report No.: LBNL-1837E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 961833
  • Archival Resource Key: ark:/67531/metadc930617

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 1, 2009

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  • Nov. 13, 2016, 7:26 p.m.

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  • Oct. 2, 2017, 12:39 p.m.

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Naulleau, Patrick & Gallatin, Gregg. The effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer, article, May 1, 2009; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc930617/: accessed November 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.