title: Nanoscale manipulation of Ge nanowires by ion hammering
creator: Picraux, Samuel T
creator: Romano, Lucia
creator: Rudawski, Nicholas G
creator: Holzworth, Monta R
creator: Jones, Kevin S
creator: Choi, S G
contributor: United States. Department of Energy.
publisher: Los Alamos National Laboratory
date: 2009-01-01
language: English
description: Nanowires generated considerable interest as nanoscale
 interconnects and as active components of both electronic and
 electromechanical devices. However, in many cases, manipulation and
 modification of nanowires are required to realize their full potential. It is
 essential, for instance, to control the orientation and positioning of
 nanowires in some specific applications. This work demonstrates a simple
 method to reversibly control the shape and the orientation of Ge nanowires by
 using ion beams. Initially, crystalline nanowires were partially amorphized by
 30 keY Ga+-implantation. After amorphization, viscous flow and plastic
 deformation occurred due to the ion hammering effect, causing the nanowires to
 bend toward the beam direction. The bending was reversed multiple times by
 ion-implanting the opposite side of the nanowires, resulting in straightening
 of the nanowires and subsequent bending in the opposite direction. This ion
 hammering effect demonstrates the detailed manipulation of nanoscale
 structures is possible through the use of ion irradiation.
subject: Modifications
subject: Orientation
subject: Irradiation
subject: Viscous Flow
subject: Positioning
subject: Ion Beams
subject: 36
subject: Bending
subject: Plastics
subject: Shape
subject: Germanium
subject: Deformation
source: Journal Name: Nature Nanotechnology
type: Article
format: Text
identifier: rep-no: LA-UR-09-00770
identifier: rep-no: LA-UR-09-770
identifier: grantno: AC52-06NA25396
identifier: osti: 956396
identifier: https://digital.library.unt.edu/ark:/67531/metadc930479/
identifier: ark: ark:/67531/metadc930479