Nanoscale manipulation of Ge nanowires by ion hammering

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Nanowires generated considerable interest as nanoscale interconnects and as active components of both electronic and electromechanical devices. However, in many cases, manipulation and modification of nanowires are required to realize their full potential. It is essential, for instance, to control the orientation and positioning of nanowires in some specific applications. This work demonstrates a simple method to reversibly control the shape and the orientation of Ge nanowires by using ion beams. Initially, crystalline nanowires were partially amorphized by 30 keY Ga+-implantation. After amorphization, viscous flow and plastic deformation occurred due to the ion hammering effect, causing the nanowires to bend ... continued below

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Picraux, Samuel T; Romano, Lucia; Rudawski, Nicholas G; Holzworth, Monta R; Jones, Kevin S & Choi, S G January 1, 2009.

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Nanowires generated considerable interest as nanoscale interconnects and as active components of both electronic and electromechanical devices. However, in many cases, manipulation and modification of nanowires are required to realize their full potential. It is essential, for instance, to control the orientation and positioning of nanowires in some specific applications. This work demonstrates a simple method to reversibly control the shape and the orientation of Ge nanowires by using ion beams. Initially, crystalline nanowires were partially amorphized by 30 keY Ga+-implantation. After amorphization, viscous flow and plastic deformation occurred due to the ion hammering effect, causing the nanowires to bend toward the beam direction. The bending was reversed multiple times by ion-implanting the opposite side of the nanowires, resulting in straightening of the nanowires and subsequent bending in the opposite direction. This ion hammering effect demonstrates the detailed manipulation of nanoscale structures is possible through the use of ion irradiation.

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  • Journal Name: Nature Nanotechnology

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  • Report No.: LA-UR-09-00770
  • Report No.: LA-UR-09-770
  • Grant Number: AC52-06NA25396
  • Office of Scientific & Technical Information Report Number: 956396
  • Archival Resource Key: ark:/67531/metadc930479

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  • January 1, 2009

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  • Nov. 13, 2016, 7:26 p.m.

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  • Dec. 12, 2016, 12:35 p.m.

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Picraux, Samuel T; Romano, Lucia; Rudawski, Nicholas G; Holzworth, Monta R; Jones, Kevin S & Choi, S G. Nanoscale manipulation of Ge nanowires by ion hammering, article, January 1, 2009; [New Mexico]. (digital.library.unt.edu/ark:/67531/metadc930479/: accessed June 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.