Hybrid MOSFET/Driver for Ultra-Fast Switching

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The ultra-fast switching of power MOSFETs, in about 1ns, is very challenging. This is largely due to the parasitic inductance that is intrinsic to commercial packages used for both MOSFETs and drivers. Parasitic gate and source inductance not only limit the voltage rise time on the MOSFET internal gate structure but can also cause the gate voltage to oscillate. This paper describes a hybrid approach that substantially reduces the parasitic inductance between the driver and MOSFET gate, as well as between the MOSFET source and its external connection. A flip chip assembly is used to directly attach a die-form power ... continued below

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Tang, T July 14, 2009.

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The ultra-fast switching of power MOSFETs, in about 1ns, is very challenging. This is largely due to the parasitic inductance that is intrinsic to commercial packages used for both MOSFETs and drivers. Parasitic gate and source inductance not only limit the voltage rise time on the MOSFET internal gate structure but can also cause the gate voltage to oscillate. This paper describes a hybrid approach that substantially reduces the parasitic inductance between the driver and MOSFET gate, as well as between the MOSFET source and its external connection. A flip chip assembly is used to directly attach a die-form power MOSFET and driver on a PCB. The parasitic inductances are significantly reduced by eliminating bond wires and minimizing lead length. The experimental results demonstrate ultra-fast switching of the power MOSFET with excellent control of the gate-source voltage.

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  • Journal Name: IEEE Transactions on Dielectrics and Electrical Insulation

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  • Report No.: SLAC-PUB-13410
  • Grant Number: AC02-76SF00515
  • DOI: 10.1109/TDEI.2009.5211841 | External Link
  • Office of Scientific & Technical Information Report Number: 959349
  • Archival Resource Key: ark:/67531/metadc929764

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • July 14, 2009

Added to The UNT Digital Library

  • Nov. 13, 2016, 7:26 p.m.

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  • Dec. 15, 2016, 3:28 p.m.

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Tang, T. Hybrid MOSFET/Driver for Ultra-Fast Switching, article, July 14, 2009; United States. (digital.library.unt.edu/ark:/67531/metadc929764/: accessed November 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.