Don't always blame the photons: Relationships between deprotection blur, LER, and shot noise in EUV photoresists

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A corner rounding metric has been used to determine the deprotection blur of Rohm and Haas XP 5435, XP 5271, and XP 5496 extreme ultraviolet (EUV) photoresists as base weight percent is varied; an experimental open platform photoresist (EH27) as base weight percent is varied; and TOK EUVR P1123 and FUJI 1195 photoresists as post-exposure bake (PEB) temperature is varied. In the XP 5435, XP 5271, XP 5496, and EH27 resist platforms, a 6 times increase in base weight percent reduces the size of successfully patterned 1:1 lines by over 10 nm and lowers intrinsic line-edge roughness (LER) by over ... continued below

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Anderson, Christopher N. & Naulleau, Patrick P. June 2, 2008.

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A corner rounding metric has been used to determine the deprotection blur of Rohm and Haas XP 5435, XP 5271, and XP 5496 extreme ultraviolet (EUV) photoresists as base weight percent is varied; an experimental open platform photoresist (EH27) as base weight percent is varied; and TOK EUVR P1123 and FUJI 1195 photoresists as post-exposure bake (PEB) temperature is varied. In the XP 5435, XP 5271, XP 5496, and EH27 resist platforms, a 6 times increase in base weight percent reduces the size of successfully patterned 1:1 lines by over 10 nm and lowers intrinsic line-edge roughness (LER) by over 2.5 nm without changing deprotection blur. In TOK EUVR P1123 photoresist, lowering the PEB temperature from 100 C to 80 C reduces measured deprotection blur (using the corner metric) from 30 nm to 20 nm and reduces the LER of 50 nm 1:1 lines from 4.8 nm to 4.3 nm. These data are used to drive a lengthy discussion about the relationships between deprotection blur, LER, and shot noise in EUV photoresists. We provide two separate conclusions: (1) shot noise is probably not the dominant mechanism causing the 3-4 nm EUV LER floor that has been observed over the past several years; (2) chemical contrast contributes to LER whenever deprotection blur is large relative to the printed half pitch.

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  • Journal Name: JVST B

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  • Report No.: LBNL-1435E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 950847
  • Archival Resource Key: ark:/67531/metadc929719

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • June 2, 2008

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  • Nov. 13, 2016, 7:26 p.m.

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  • Oct. 2, 2017, 12:38 p.m.

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Anderson, Christopher N. & Naulleau, Patrick P. Don't always blame the photons: Relationships between deprotection blur, LER, and shot noise in EUV photoresists, article, June 2, 2008; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc929719/: accessed December 13, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.