Thorough characterization of a EUV mask

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We reported that we were successful in our 45nm technology node device demonstration in February 2008 and 22nm node technology node device patterning in February 2009 using ASML's Alpha Demo Tool (ADT). In order to insert extreme ultraviolet (EUV) lithography at the 15nm technology node and beyond, we have thoroughly characterized one EUV mask, a so-called NOVACD mask. In this paper, we report on three topics, The first topic is an analysis of line edge roughness (LER) using a mask Scanning Electron Microscope (SEM), an Atomic Force Microscope (AFM) and the Actinic Inspection Tool (AIT) to compare resist images printed ... continued below

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Mizuno, H.; McIntyre, G.; Koay, C.-W.; Burkhardt, M.; He, L.; Hartley, J. et al. June 25, 2009.

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We reported that we were successful in our 45nm technology node device demonstration in February 2008 and 22nm node technology node device patterning in February 2009 using ASML's Alpha Demo Tool (ADT). In order to insert extreme ultraviolet (EUV) lithography at the 15nm technology node and beyond, we have thoroughly characterized one EUV mask, a so-called NOVACD mask. In this paper, we report on three topics, The first topic is an analysis of line edge roughness (LER) using a mask Scanning Electron Microscope (SEM), an Atomic Force Microscope (AFM) and the Actinic Inspection Tool (AIT) to compare resist images printed with the ASML ADT. The results of the analysis show a good correlation between the mask AFM and the mask SEM measurements, However, the resist printing results for the isolated space patterns are slightly different. The cause ofthis discrepancy may be resist blur, image log slope and SEM image quality and so on. The second topic is an analysis of mask topography using an AFM and relative reflectivity of mirror and absorber surface using the AIT, The AFM data show 6 and 7 angstrom rms roughness for mirror and absorber, respectively. The reflectivity measurements show that the mirror reflects EUV light about 20 times higher than absorber. The last topic is an analysis of a 32nm technology node SRAM cell which includes a comparison of mask SEM image, AIT image, resist image and simulation results. The ADT images of the SRAM pattern were of high quality even though the mask patters were not corrected for OPC or any EUV-specific effects. Image simulation results were in good agreement with the printing results.

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  • Photomask Japan 2009, Yokohama, Japan, April 13-15, 2009

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  • Report No.: LBNL-2287E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 971186
  • Archival Resource Key: ark:/67531/metadc929242

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • June 25, 2009

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  • Nov. 13, 2016, 7:26 p.m.

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  • Oct. 2, 2017, 4:28 p.m.

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Mizuno, H.; McIntyre, G.; Koay, C.-W.; Burkhardt, M.; He, L.; Hartley, J. et al. Thorough characterization of a EUV mask, article, June 25, 2009; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc929242/: accessed April 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.