The SEMATECH Berkeley microfield exposure tool: learning a the 22-nm node and beyond

PDF Version Also Available for Download.

Description

Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUV production tools make resist resolution a critical issue even at the 32-nm node. In this presentation, sub 22 nm half pitch imaging results of EUV resists are reported. We also present contact hole printing at the 30-nm ... continued below

Physical Description

11

Creation Information

Naulleau, Patrick; Anderson, Christopher; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A. et al. February 16, 2009.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUV production tools make resist resolution a critical issue even at the 32-nm node. In this presentation, sub 22 nm half pitch imaging results of EUV resists are reported. We also present contact hole printing at the 30-nm level. Although resist development has progressed relatively well in the areas of resolution and sensitivity, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of system-level contributors to the LER observed from the SEMA TECH Berkeley microfield tool.

Physical Description

11

Source

  • SPIE Advanced Lithography 2009, San Jose, CA, February 23-27, 2009; Related Information: Journal Publication Date: April 2009

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LBNL-882E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 953694
  • Archival Resource Key: ark:/67531/metadc928958

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • February 16, 2009

Added to The UNT Digital Library

  • Nov. 13, 2016, 7:26 p.m.

Description Last Updated

  • Oct. 2, 2017, 5:36 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 3

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Naulleau, Patrick; Anderson, Christopher; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A. et al. The SEMATECH Berkeley microfield exposure tool: learning a the 22-nm node and beyond, article, February 16, 2009; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc928958/: accessed December 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.