Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

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Description

Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

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5 pages

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Yang, Wen; Chang, Kai & Zhang, Shou-Cheng March 19, 2010.

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Description

Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

Physical Description

5 pages

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  • Journal Name: Phys.Rev.Lett.100:056602,2008

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  • Report No.: SLAC-PUB-13920
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 973792
  • Archival Resource Key: ark:/67531/metadc928819

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  • March 19, 2010

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  • Nov. 13, 2016, 7:26 p.m.

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  • July 13, 2017, 4:34 p.m.

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Yang, Wen; Chang, Kai & Zhang, Shou-Cheng. Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells, article, March 19, 2010; United States. (digital.library.unt.edu/ark:/67531/metadc928819/: accessed August 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.