Erratic Dislocations within Funnel Defects in AlN Templates for AlGaNEpitaxial Layer Growth Page: 1 of 15
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Erratic Dislocations within Funnel Defects in AlN Templates for AlGaN
Epitaxial Layer Growth
M. E. Hawkridge 1, a) Z. Liliental-Weber', H. J. Kim2, S. Choi2, D. Yoo2, J. -H. Ryou2,
and R. D. Dupuis2
'Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road
MS 62R0209 213, Berkeley, CA 94720, USA
2 Center for Compound Semiconductors and School of Electrical and Computer
Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia
30332-0250, USA
Abstract
We report our transmission electron microscopy observations of erratic
dislocation behavior within funnel-like defects in the top of AlN templates filled with
AlGaN from an overlying epitaxial layer. This dislocation behavior is observed in
material where phase separation is also observed. Several bare AlN templates were
examined to determine the formation mechanism of the funnels. Our results suggest that
they are formed prior to epitaxial layer deposition due to the presence of impurities
during template re-growth. We discuss the erratic dislocation behavior in relation to the1
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Hawkridge, M. E.; Liliental-Weber, Z.; Jin Kim, H.; Choi, S.; Yoo, D.; Ryou, Jae-Hyun et al. Erratic Dislocations within Funnel Defects in AlN Templates for AlGaNEpitaxial Layer Growth, article, March 13, 2009; Berkeley, California. (https://digital.library.unt.edu/ark:/67531/metadc927320/m1/1/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.