Origin of charge density at LaAlO3-on-SrTiO3 heterointerfacespossibility of intrinsic doping Metadata

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  • Main Title Origin of charge density at LaAlO3-on-SrTiO3 heterointerfacespossibility of intrinsic doping


  • Author: Siemons, W.
    Creator Type: Personal


  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization


  • Name: SLAC National Accelerator Laboratory
    Place of Publication: United States


  • Creation: 2010-04-29


  • English


  • Content Description: As discovered by Ohtomo et al., a large sheet charge density with high mobility exists at the interface between SrTiO{sub 3} and LaAlO{sub 3}. Based on transport, spectroscopic and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.


  • Keyword: Origin
  • Keyword: Carrier Density
  • Keyword: Oxygen
  • Keyword: Matsci
  • Keyword: Annealing
  • Keyword: Deposition
  • Keyword: Vacancies Matsci
  • STI Subject Categories: 71 Classical And Quantum Mechanics, General Physics
  • Keyword: Lasers
  • Keyword: Defects
  • Keyword: Charge Density
  • Keyword: Transport
  • Keyword: Permittivity


  • Journal Name: Submitted to Physical Review Letters


  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI


  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article


  • Text


  • Report No.: SLAC-PUB-13944
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 979045
  • Archival Resource Key: ark:/67531/metadc926390


  • Display Note: http://www.slac.stanford.edu/cgi-wrap/pubpage?slac-pub-13944.html