Origin of charge density at LaAlO3-on-SrTiO3 heterointerfacespossibility of intrinsic doping

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As discovered by Ohtomo et al., a large sheet charge density with high mobility exists at the interface between SrTiO{sub 3} and LaAlO{sub 3}. Based on transport, spectroscopic and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

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Siemons, W. April 29, 2010.

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As discovered by Ohtomo et al., a large sheet charge density with high mobility exists at the interface between SrTiO{sub 3} and LaAlO{sub 3}. Based on transport, spectroscopic and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

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  • Journal Name: Submitted to Physical Review Letters

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  • Report No.: SLAC-PUB-13944
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 979045
  • Archival Resource Key: ark:/67531/metadc926390

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  • April 29, 2010

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  • Nov. 13, 2016, 7:26 p.m.

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  • Feb. 17, 2017, 6:35 p.m.

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Siemons, W. Origin of charge density at LaAlO3-on-SrTiO3 heterointerfacespossibility of intrinsic doping, article, April 29, 2010; United States. (digital.library.unt.edu/ark:/67531/metadc926390/: accessed October 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.