Ion Implanted Ge:B Far Infrard Blocked Impurity BandDetectors

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Ge Blocked Impurity Band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking and absorbing layers of necessary purity and compensation. The effect of doping in the infrared active layer on the far-infrared photoconductive response has been studied, and the optimum doping concentration is found to be {approx} 4 x 10{sup 16} cm{sup -3}. Devices doped near this concentration show good blocking characteristics with low dark currents. The spectral response extends to {approx} 45 cm{sup -1}, clearly ... continued below

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Beeman, J. W.; Goyal, S.; Reichertz, L. A. & Haller, E. E. June 12, 2006.

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Ge Blocked Impurity Band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking and absorbing layers of necessary purity and compensation. The effect of doping in the infrared active layer on the far-infrared photoconductive response has been studied, and the optimum doping concentration is found to be {approx} 4 x 10{sup 16} cm{sup -3}. Devices doped near this concentration show good blocking characteristics with low dark currents. The spectral response extends to {approx} 45 cm{sup -1}, clearly showing the formation of an impurity band. Under low background testing conditions these devices attain a responsivity of 0.12 A/W and NEP of 5.23 x 10{sup -15} W/Hz{sup -1/2}.

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  • Journal Name: Infrared Physics and Technology; Journal Volume: 51; Journal Issue: 1; Related Information: Journal Publication Date: 2007

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  • Report No.: LBNL--60444
  • Grant Number: DE-AC02-05CH11231
  • Grant Number: NASA:W-19,889
  • Office of Scientific & Technical Information Report Number: 927181
  • Archival Resource Key: ark:/67531/metadc902819

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • June 12, 2006

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  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 3, 2017, 2:01 p.m.

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Beeman, J. W.; Goyal, S.; Reichertz, L. A. & Haller, E. E. Ion Implanted Ge:B Far Infrard Blocked Impurity BandDetectors, article, June 12, 2006; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc902819/: accessed December 13, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.