Benefits of microscopy with super resolution

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Transmission Electron Microscopy developed from an imagingtool into a quantitative electron beam characterization tool that locallyaccesses structure, chemistry, and bonding in materials with sub Angstromresolution. Experiments utilize coherently and incoherently scatteredelectrons. In this contribution, the interface between gallium nitrideand sapphire as well as thin silicon gate oxides are studied tounderstand underlying physical processes and the strength of thedifferent microscopy techniques. An investigation of the GaN/sapphireinterface benefits largely from the application of phase contrastmicroscopy that makes it possible to visualize dislocation corestructures and single columns of oxygen and nitrogen at a closest spacingof 85 pm. In contrast, it is adequate to ... continued below

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Kisielowski, C.; Principe, E.; Freitag, B. & Hubert, D. July 9, 2001.

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Transmission Electron Microscopy developed from an imagingtool into a quantitative electron beam characterization tool that locallyaccesses structure, chemistry, and bonding in materials with sub Angstromresolution. Experiments utilize coherently and incoherently scatteredelectrons. In this contribution, the interface between gallium nitrideand sapphire as well as thin silicon gate oxides are studied tounderstand underlying physical processes and the strength of thedifferent microscopy techniques. An investigation of the GaN/sapphireinterface benefits largely from the application of phase contrastmicroscopy that makes it possible to visualize dislocation corestructures and single columns of oxygen and nitrogen at a closest spacingof 85 pm. In contrast, it is adequate to investigate Si/SiOxNy/poly-Siinterfaces with incoherently scattered electrons and electronspectroscopy because amorphous and poly crystalline materials areinvolved. Here, it is demonstrated that the SiOxNy/poly-Si interface isrougher than the Si/SiOx interface, that desirable nitrogen diffusiongradients can be introduced into the gate oxide, and that a nitridationcoupled with annealing increases its physical width while reducing theequivalent electrical oxide thickness to values approaching 1.2 nm.Therefore, an amorphous SiNxOy gate dielectric seems to be a suitablesubstitute for traditional gate oxides to further increase device speedby reducing dimensions in Si technology.

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  • International Conference on Defects inSemiconductors, Giessen, Germany, July 16-20, 2001

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  • Report No.: LBNL--49005
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 928217
  • Archival Resource Key: ark:/67531/metadc902457

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  • July 9, 2001

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  • Sept. 27, 2016, 1:39 a.m.

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  • Sept. 29, 2016, 7:42 p.m.

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Kisielowski, C.; Principe, E.; Freitag, B. & Hubert, D. Benefits of microscopy with super resolution, article, July 9, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc902457/: accessed August 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.