Exceptional Electron Transport Properties of In-rich InGaN

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Recent years have seen an explosion of interest in the narrow band gap end of the InGaN alloy system, particularly in InN. The existence of surface electron accumulation and a tendency for n-type conductivity have been well-established and are explained by an extremely large electron affinity and the location of the Fermi level stabilization energy (E{sub FS}) high in the conduction band [1]. These characteristics pose significant challenges to the integration of In-rich InGaN into devices and demonstrate the need for a better understanding of the relationship between native defects and electronic transport in the alloy system. It has been ... continued below

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Jones, R.E.; van Genuchten, H.C.M.; Yu, K.M.; Walukiewicz, W.; Li, S.X.; Liliental-Weber, Z. et al. October 22, 2006.

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Recent years have seen an explosion of interest in the narrow band gap end of the InGaN alloy system, particularly in InN. The existence of surface electron accumulation and a tendency for n-type conductivity have been well-established and are explained by an extremely large electron affinity and the location of the Fermi level stabilization energy (E{sub FS}) high in the conduction band [1]. These characteristics pose significant challenges to the integration of In-rich InGaN into devices and demonstrate the need for a better understanding of the relationship between native defects and electronic transport in the alloy system. It has been previously shown that high-energy particle irradiation can predictably control the electronic properties of In-rich InGaN [1]. With increasing irradiation dose, the electron concentration (n) increases and the electron mobility ({mu}) decreases until the Fermi level reaches E{sub FS}, which is the saturation point. The value of n at saturation decreases with decreasing In fraction, due to the raising of the conduction band edge with respect to E{sub FS}.

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  • International Workshop on Nitride Semiconductors2006, Kyoto, Japan, October 22-27, 2006

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  • Report No.: LBNL--63012-Ext.-Abs.
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 929046
  • Archival Resource Key: ark:/67531/metadc902419

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  • October 22, 2006

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  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 31, 2016, 3:50 p.m.

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Jones, R.E.; van Genuchten, H.C.M.; Yu, K.M.; Walukiewicz, W.; Li, S.X.; Liliental-Weber, Z. et al. Exceptional Electron Transport Properties of In-rich InGaN, article, October 22, 2006; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc902419/: accessed July 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.