Atomic Structure of Pyramidal Defects in GaN:Mg; Influence ofAnnealing

PDF Version Also Available for Download.

Description

The atomic structure of the characteristic defects (Mg-rich hexagonal pyramids) in p-doped bulk and MOCVD GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects, confirmed also with positron annihilation. The inside walls of the cavities were covered by GaN of reverse polarity compared to the matrix. Defects in bulk GaN:Mg were almost one order of magnitude larger than in thin films. An exchange of Ga and N sublattices within the defect compared to the matrix lead to ... continued below

Creation Information

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O'Keefe, M.; Hautakangas, S.; Saarinen, K. et al. October 3, 2005.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 30 times , with 7 in the last month . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

The atomic structure of the characteristic defects (Mg-rich hexagonal pyramids) in p-doped bulk and MOCVD GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects, confirmed also with positron annihilation. The inside walls of the cavities were covered by GaN of reverse polarity compared to the matrix. Defects in bulk GaN:Mg were almost one order of magnitude larger than in thin films. An exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6 {+-} 0.2 {angstrom} displacement between the Ga sublattices of these two areas. A [1100]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid was observed. Annealing of the MOCVD layers lead to slight increase of the defect size and an increase of the photoluminescence intensity. Positron annihilation confirms presence of vacancies of different sizes triggered by the Mg doping in as-grown samples and decrease of their concentration upon annealing at 900 and 1000 C.

Source

  • Journal Name: Physica Status Solidi (a); Journal Volume: 203; Journal Issue: 7; Related Information: Journal Publication Date: 2006

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LBNL--60771
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 928483
  • Archival Resource Key: ark:/67531/metadc902380

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • October 3, 2005

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

Description Last Updated

  • Oct. 31, 2016, 3:49 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 7
Total Uses: 30

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O'Keefe, M.; Hautakangas, S.; Saarinen, K. et al. Atomic Structure of Pyramidal Defects in GaN:Mg; Influence ofAnnealing, article, October 3, 2005; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc902380/: accessed October 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.