PASSIVATION OF SEMICONDUCTOR SURFACES FOR IMPROVED RADIATION DETECTORS: X-RAY PHOTOEMISSION ANALYSIS

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Surface passivation of device-grade radiation detector materials was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements before and after various chemical treatments. Specifically Br-MeOH (2% Br), KOH with NH{sub 4}F/H{sub 2}O{sub 2} and NH{sub 4}OH solutions were used to etch, reduce and oxidize the surface of Cd{sub (1-x)}Zn{sub x}Te semiconductor crystals. Scanning electron microscopy was used to evaluate the resultant microscopic surface morphology. Angle-resolved high-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated ... continued below

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7 p. (0.4 MB)

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Nelson, A; Conway, A; Reinhardt, C; Ferreira, J; Nikolic, R & Payne, S December 10, 2007.

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Surface passivation of device-grade radiation detector materials was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements before and after various chemical treatments. Specifically Br-MeOH (2% Br), KOH with NH{sub 4}F/H{sub 2}O{sub 2} and NH{sub 4}OH solutions were used to etch, reduce and oxidize the surface of Cd{sub (1-x)}Zn{sub x}Te semiconductor crystals. Scanning electron microscopy was used to evaluate the resultant microscopic surface morphology. Angle-resolved high-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for improved radiation detector devices.

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7 p. (0.4 MB)

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PDF-file: 7 pages; size: 0.4 Mbytes

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  • Presented at: Materials Research Society Fall 2007, Boston, MA, United States, Nov 26 - Nov 30, 2007

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  • Report No.: LLNL-PROC-400091
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 924006
  • Archival Resource Key: ark:/67531/metadc902024

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  • December 10, 2007

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  • Sept. 27, 2016, 1:39 a.m.

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  • April 17, 2017, 1:06 p.m.

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Nelson, A; Conway, A; Reinhardt, C; Ferreira, J; Nikolic, R & Payne, S. PASSIVATION OF SEMICONDUCTOR SURFACES FOR IMPROVED RADIATION DETECTORS: X-RAY PHOTOEMISSION ANALYSIS, article, December 10, 2007; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc902024/: accessed October 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.