ZnO:Al Doping Level and Hydrogen Growth Ambient Effects on CIGS Solar Cell Performance: Preprint

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Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) cells require a highly conducting and transparent electrode for optimum device performance. ZnO:Al films grown from targets containing 2.0 wt.% Al2O3 are commonly used for this purpose. Maximum carrier mobilities of these films grown at room temperature are ~20-25 cm2V-1s-1. Therefore, relatively high carrier concentrations are required to achieve the desired conductivity, which leads to free carrier absorption in the near infrared (IR). Lightly doped films (0.05 - 0.2 wt.% Al2O3), which show less IR absorption, reach mobility values greater than 50 cm2V-1s-1 when deposited in H2 partial pressure. We incorporate these lightly doped ZnO:Al layers ... continued below

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8 p.

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Duenow, J. N.; Gessert, T. A.; Wood, D. M.; Egaas, B.; Noufi, R. & Coutts,T. J. May 1, 2008.

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Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) cells require a highly conducting and transparent electrode for optimum device performance. ZnO:Al films grown from targets containing 2.0 wt.% Al2O3 are commonly used for this purpose. Maximum carrier mobilities of these films grown at room temperature are ~20-25 cm2V-1s-1. Therefore, relatively high carrier concentrations are required to achieve the desired conductivity, which leads to free carrier absorption in the near infrared (IR). Lightly doped films (0.05 - 0.2 wt.% Al2O3), which show less IR absorption, reach mobility values greater than 50 cm2V-1s-1 when deposited in H2 partial pressure. We incorporate these lightly doped ZnO:Al layers into CIGS PV cells produced at the National Renewable Energy Laboratory (NREL). Preliminary results show quantum efficiency values of these cells rival those of a past world-record cell produced at NREL that used 2.0 wt.% Al-doped ZnO films. The highest cell efficiency obtained in this trial was 18.1%.

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8 p.

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  • Presented at the 33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008, San Diego, California

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  • Report No.: NREL/CP-520-42537
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 929618
  • Archival Resource Key: ark:/67531/metadc901943

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Office of Scientific & Technical Information Technical Reports

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  • May 1, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • April 6, 2017, 3:23 p.m.

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Duenow, J. N.; Gessert, T. A.; Wood, D. M.; Egaas, B.; Noufi, R. & Coutts,T. J. ZnO:Al Doping Level and Hydrogen Growth Ambient Effects on CIGS Solar Cell Performance: Preprint, article, May 1, 2008; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc901943/: accessed November 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.