AFM Morphology Study of Si1-Y GeY:H Films Deposited by LF PE CVD from Silane-Germane with Different

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The morphology of Si{sub 1-Y} Ge{sub Y}:H films in the range of Y=0.23 to 0.9 has been studied by AFM. The films were deposited by Low Frequency (LF) PE CVD at substrate temperature T{sub s}=300 C and discharge frequency f=110 kHz from silane+germane mixture with and without, Ar and H{sub 2} dilution. The films were deposited on silicon and glass substrates. AFM images were taken and analyzed for 2 x 2 mm{sup 2} area. All the images demonstrated ''grain'' like structure, which was characterized by the height distribution function F(H) average roughness <H>, standard height deviation Rq, lateral correlation length ... continued below

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8 p. (0.3 MB)

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Sanchez, L & Kosarev, A March 28, 2005.

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The morphology of Si{sub 1-Y} Ge{sub Y}:H films in the range of Y=0.23 to 0.9 has been studied by AFM. The films were deposited by Low Frequency (LF) PE CVD at substrate temperature T{sub s}=300 C and discharge frequency f=110 kHz from silane+germane mixture with and without, Ar and H{sub 2} dilution. The films were deposited on silicon and glass substrates. AFM images were taken and analyzed for 2 x 2 mm{sup 2} area. All the images demonstrated ''grain'' like structure, which was characterized by the height distribution function F(H) average roughness <H>, standard height deviation Rq, lateral correlation length L{sub c} area distribution function F(s), mean grain area <s>, diameter distribution function F(d), and mean grain diameter <d>. The roughness <H> of the films monotonically increases with Y for all dilutions, but more significantly in the films deposited without dilution. L{sub c} continuously grows with Y in the films deposited without dilution, while more complex behavior L{sub c}(Y) is observed in the films deposited with H- or Ar dilution. The sharpness of F(H) characterized by curtosis {gamma} depends on dilution and the sharpest F(H) are for the films deposited with Ar ({gamma}=5.30,Y=0.23) and without dilution ({gamma}=4.3, Y=0.45). Isothermal annealing caused increase of <H>, L{sub c} in the films deposited with H- and Ar dilutions, while in the films prepared without dilution the behavior was more complex, depending on the substrates. Significant narrowing of the height distribution was observed in the films deposited with H dilution or without dilution.

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8 p. (0.3 MB)

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PDF-file: 8 pages; size: 0.3 Mbytes

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  • Presented at: Materials Research Society, San Francisco, CA, United States, Mar 28 - Apr 01, 2005

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  • Report No.: UCRL-CONF-235140
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 922103
  • Archival Resource Key: ark:/67531/metadc901939

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  • March 28, 2005

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  • Sept. 27, 2016, 1:39 a.m.

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  • April 17, 2017, 1:33 p.m.

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Sanchez, L & Kosarev, A. AFM Morphology Study of Si1-Y GeY:H Films Deposited by LF PE CVD from Silane-Germane with Different, article, March 28, 2005; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc901939/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.