Damage displacement phenomena in Si junction devices : mapping and interpreting a science and technology knowledge domain.

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As technical knowledge grows deeper, broader, and more interconnected, knowledge domains increasingly combine a number of sub-domains. More often than not, each of these sub-domains has its own community of specialists and forums for interaction. Hence, from a generalist's viewpoint, it is sometimes difficult to understand the relationships between the sub-domains within the larger domain; and, from a specialist's viewpoint, it may be difficult for those working in one sub-domain to keep abreast of knowledge gained in another sub-domain. These difficulties can be especially important in the initial stages of creating new projects aimed at adding knowledge either at the ... continued below

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19 p.

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Tsao, Jeffrey Yeenien October 1, 2004.

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Description

As technical knowledge grows deeper, broader, and more interconnected, knowledge domains increasingly combine a number of sub-domains. More often than not, each of these sub-domains has its own community of specialists and forums for interaction. Hence, from a generalist's viewpoint, it is sometimes difficult to understand the relationships between the sub-domains within the larger domain; and, from a specialist's viewpoint, it may be difficult for those working in one sub-domain to keep abreast of knowledge gained in another sub-domain. These difficulties can be especially important in the initial stages of creating new projects aimed at adding knowledge either at the domain or sub-domain level. To circumvent these difficulties, one would ideally like to create a map of the knowledge domain--a map which would help clarify relationships between the various sub-domains, and a map which would help inform choices regarding investing in the production of knowledge either at the domain or sub-domain levels. In practice, creating such a map is non-trivial. First, relationships between knowledge subdomains are complex, and not likely to be easily simplified into a visualizable 2-or-few-dimensional map. Second, even if some of the relationships can be simplified, capturing them would require some degree of expert understanding of the knowledge domain, rendering impossible any fully automated method for creating the map. In this work, we accept these limitations, and within them, attempt to explore semi-automated methodologies for creating such a map. We chose as the knowledge domain for this case study 'displacement damage phenomena in Si junction devices'. This knowledge domain spans a particularly wide range of knowledge subdomains, and hence is a particularly challenging one.

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19 p.

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  • Report No.: SAND2004-4834
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/919640 | External Link
  • Office of Scientific & Technical Information Report Number: 919640
  • Archival Resource Key: ark:/67531/metadc901847

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • October 1, 2004

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

Description Last Updated

  • Dec. 5, 2016, 1:28 p.m.

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Tsao, Jeffrey Yeenien. Damage displacement phenomena in Si junction devices : mapping and interpreting a science and technology knowledge domain., report, October 1, 2004; United States. (digital.library.unt.edu/ark:/67531/metadc901847/: accessed June 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.