Growth and structure of water on SiO2 films on Si investigated byKelvin probe microscopy and in situ X-ray Spectroscopies

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The growth of water on thin SiO{sub 2} films on Si wafers at vapor pressures between 1.5 and 4 torr and temperatures between -10 and 21 C has been studied in situ using Kelvin Probe Microscopy and X-ray photoemission and absorption spectroscopies. From 0 to 75% relative humidity (RH) water adsorbs forming a uniform film 4-5 layers thick. The surface potential increases in that RH range by about 400 mV and remains constant upon further increase of the RH. Above 75% RH the water film grows rapidly, reaching 6-7 monolayers at around 90% RH and forming a macroscopic drop near ... continued below

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Verdaguer, A.; Weis, C.; Oncins, G.; Ketteler, G.; Bluhm, H. & Salmeron, M. June 14, 2007.

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The growth of water on thin SiO{sub 2} films on Si wafers at vapor pressures between 1.5 and 4 torr and temperatures between -10 and 21 C has been studied in situ using Kelvin Probe Microscopy and X-ray photoemission and absorption spectroscopies. From 0 to 75% relative humidity (RH) water adsorbs forming a uniform film 4-5 layers thick. The surface potential increases in that RH range by about 400 mV and remains constant upon further increase of the RH. Above 75% RH the water film grows rapidly, reaching 6-7 monolayers at around 90% RH and forming a macroscopic drop near 100%. The O K-edge near-edge X-ray absorption spectrum around 75% RH is similar to that of liquid water (imperfect H-bonding coordination) at temperatures above 0 C and ice-like below 0 C.

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  • Journal Name: Langmuir; Journal Volume: 23; Journal Issue: 19; Related Information: Journal Publication Date: 08/2007

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  • Report No.: LBNL--62353
  • Grant Number: DE-AC02-05CH11231
  • DOI: 10.1021/la700893w | External Link
  • Office of Scientific & Technical Information Report Number: 928777
  • Archival Resource Key: ark:/67531/metadc901824

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  • June 14, 2007

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  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 31, 2016, 3:50 p.m.

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Verdaguer, A.; Weis, C.; Oncins, G.; Ketteler, G.; Bluhm, H. & Salmeron, M. Growth and structure of water on SiO2 films on Si investigated byKelvin probe microscopy and in situ X-ray Spectroscopies, article, June 14, 2007; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc901824/: accessed April 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.