Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.

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Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {gamma}-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the {sup 60}Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes ... continued below

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52 p.

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DePriest, Kendall Russell; Kajder, Karen C. & Peters, Curtis D. August 1, 2008.

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Description

Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {gamma}-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the {sup 60}Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes the results of the experiments performed at the GIF.

Physical Description

52 p.

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  • Report No.: SAND2008-5253
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/940518 | External Link
  • Office of Scientific & Technical Information Report Number: 940518
  • Archival Resource Key: ark:/67531/metadc901631

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • August 1, 2008

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

Description Last Updated

  • Dec. 5, 2016, 2 p.m.

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DePriest, Kendall Russell; Kajder, Karen C. & Peters, Curtis D. Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors., report, August 1, 2008; United States. (digital.library.unt.edu/ark:/67531/metadc901631/: accessed July 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.