Ge Interface Engineering with Ozone-oxidation for Low Interface State Density

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Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D{sub it}) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D{sub it} dependency on growth conditions was studied. Minimum D{sub it} of 3 x 10{sup 11} cm{sup -2} V{sup -1} was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D{sub it} is strongly affected by the distribution of oxidation states and quality ... continued below

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3 pages

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Kuzum, Duygu; Krishnamohan, T.; Pethe, Abhijit J.; Okyay, Ali K.; Oshima, Yasuhiro; Sun, Yun et al. June 2, 2008.

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Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D{sub it}) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D{sub it} dependency on growth conditions was studied. Minimum D{sub it} of 3 x 10{sup 11} cm{sup -2} V{sup -1} was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D{sub it} is strongly affected by the distribution of oxidation states and quality of the suboxide.

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3 pages

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  • Journal Name: IEEE Electron.Dev.Lett.29:328-330,2008

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  • Report No.: SLAC-PUB-13247
  • Grant Number: AC02-76SF00515
  • DOI: 10.1109/LED.2008.918272 | External Link
  • Office of Scientific & Technical Information Report Number: 929290
  • Archival Resource Key: ark:/67531/metadc901612

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  • June 2, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • July 26, 2017, 12:01 p.m.

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Kuzum, Duygu; Krishnamohan, T.; Pethe, Abhijit J.; Okyay, Ali K.; Oshima, Yasuhiro; Sun, Yun et al. Ge Interface Engineering with Ozone-oxidation for Low Interface State Density, article, June 2, 2008; [Menlo Park, California]. (digital.library.unt.edu/ark:/67531/metadc901612/: accessed October 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.