Electromigration-induced plasticity and texture in Cu interconnects

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Plastic deformation has been observed in damascene Cu interconnect test structures during an in-situ electromigration experiment and before the onset of visible microstructural damage (ie. voiding) using a synchrotron technique of white beam X-ray microdiffraction. We show here that the extent of this electromigration-induced plasticity is dependent on the texture of the Cu grains in the line. In lines with strong <111> textures, the extent of plastic deformation is found to be relatively large compared to our plasticity results in the previous study [1] using another set of Cu lines with weaker textures. This is consistent with our earlier observation ... continued below

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Source, Advanced Light; Tamura, Nobumichi; Budiman, A. S.; Hau-Riege, C.S.; Besser, P. R.; Marathe, A. et al. October 31, 2007.

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Description

Plastic deformation has been observed in damascene Cu interconnect test structures during an in-situ electromigration experiment and before the onset of visible microstructural damage (ie. voiding) using a synchrotron technique of white beam X-ray microdiffraction. We show here that the extent of this electromigration-induced plasticity is dependent on the texture of the Cu grains in the line. In lines with strong <111> textures, the extent of plastic deformation is found to be relatively large compared to our plasticity results in the previous study [1] using another set of Cu lines with weaker textures. This is consistent with our earlier observation that the occurrence of plastic deformation in a given grain can be strongly correlated with the availability of a <112> direction of the crystal in the proximity of the direction of the electron flow in the line (within an angle of 10{sup o}). In <111> out-of-plane oriented grains in a damascene interconnect scheme, the crystal plane facing the sidewall tends to be a {l_brace}110{r_brace} plane,[2-4] so as to minimize interfacial energy. Therefore, it is deterministic rather than probabilistic that the <111> grains will have a <112> direction nearly parallel to the direction of electron flow. Thus, strong <111> textures lead to more plasticity, as we observe.

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  • Stress Workshop 2007, Kyoto, Japan, April 4-6, 2007; Related Information: Journal Publication Date: 10/31/2007

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  • Report No.: LBNL-521E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 934959
  • Archival Resource Key: ark:/67531/metadc901606

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  • October 31, 2007

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  • Sept. 27, 2016, 1:39 a.m.

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  • Jan. 4, 2017, 3:33 p.m.

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Source, Advanced Light; Tamura, Nobumichi; Budiman, A. S.; Hau-Riege, C.S.; Besser, P. R.; Marathe, A. et al. Electromigration-induced plasticity and texture in Cu interconnects, article, October 31, 2007; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc901606/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.