Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008

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This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.

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9 p.

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Tan, T. Y. & Li, N. September 1, 2008.

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Description

This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.

Physical Description

9 p.

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  • Related Information: Work performed by Duke University, Durham, North Carolina

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  • Report No.: NREL/SR-520-44088
  • Grant Number: AC36-99-GO10337
  • DOI: 10.2172/939277 | External Link
  • Office of Scientific & Technical Information Report Number: 939277
  • Archival Resource Key: ark:/67531/metadc901529

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Creation Date

  • September 1, 2008

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

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  • April 6, 2017, 3:32 p.m.

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Tan, T. Y. & Li, N. Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008, report, September 1, 2008; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc901529/: accessed November 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.