Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors (Presentation)

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Description

The conclusions of this report are: (1) intrinsic donor-type defects In{sub Cu}, Ga{sub Cu}, and V{sub Se}, and their complexes with V{sub Cu} cause metastability, but also act to limit V{sub OC}; (2) growth conditions which minimize these defects (Cu-rich/Se-rich) are very different from those currently used; and (3) overcoming V{sub OC} limitation requires to address other issues and trade-offs.

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13 p.

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Lany, S. & Zunger, A. May 1, 2008.

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Description

The conclusions of this report are: (1) intrinsic donor-type defects In{sub Cu}, Ga{sub Cu}, and V{sub Se}, and their complexes with V{sub Cu} cause metastability, but also act to limit V{sub OC}; (2) growth conditions which minimize these defects (Cu-rich/Se-rich) are very different from those currently used; and (3) overcoming V{sub OC} limitation requires to address other issues and trade-offs.

Physical Description

13 p.

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  • Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008, San Diego, California

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  • Report No.: NREL/PR-590-43272
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 939530
  • Archival Resource Key: ark:/67531/metadc901037

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  • May 1, 2008

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

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  • April 3, 2017, 7:50 p.m.

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Lany, S. & Zunger, A. Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors (Presentation), article, May 1, 2008; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc901037/: accessed December 12, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.