Electrical properties of a-C:Mo films produced by dual-cathode filtered cathodic arc plasma deposition

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Molybdenum-containing amorphous carbon (a-C:Mo) thin films were prepared using a dual-cathode filtered cathodic arc plasma source with a molybdenum and a carbon (graphite) cathode. The Mo content in the films was controlled by varying the deposition pulse ratio of Mo and C. Film sheet resistance was measured in situ at process temperature, which was close to room temperature, as well as ex situ as a function of temperature (300-515 K) in ambient air. Film resistivity and electrical activation energy were derived for different Mo and C ratios and substrate bias. Film thickness was in the range 8-28 nm. Film resistivity ... continued below

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Sansongsiri, Sakon; Anders, Andre & Yodsombat, Banchob January 20, 2008.

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Molybdenum-containing amorphous carbon (a-C:Mo) thin films were prepared using a dual-cathode filtered cathodic arc plasma source with a molybdenum and a carbon (graphite) cathode. The Mo content in the films was controlled by varying the deposition pulse ratio of Mo and C. Film sheet resistance was measured in situ at process temperature, which was close to room temperature, as well as ex situ as a function of temperature (300-515 K) in ambient air. Film resistivity and electrical activation energy were derived for different Mo and C ratios and substrate bias. Film thickness was in the range 8-28 nm. Film resistivity varied from 3.55x10-4 Omega m to 2.27x10-6 Omega m when the Mo/C pulse ratio was increased from 0.05 to 0.4, with no substrate bias applied. With carbon-selective bias, the film resistivity was in the range of 4.59x10-2 and 4.05 Omega m at a Mo/C pulse ratio of 0.05. The electrical activation energy decreased from 3.80x10-2 to 3.36x10-4 eV when the Mo/C pulse ratio was increased in the absence of bias, and from 0.19 to 0.14 eV for carbon-selective bias conditions. The resistivity of the film shifts systematically with the amounts of Mo and upon application of substrate bias voltage. The intensity ratio of the Raman D-peak and G-peak (ID/IG) correlated with the pre-exponential factor (sigma 0) which included charge carrier density and density of states.

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  • Journal Name: Diamond and Related Materials

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  • Report No.: LBNL-1004E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 938788
  • Archival Resource Key: ark:/67531/metadc900328

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • January 20, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 28, 2016, 7:10 p.m.

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Sansongsiri, Sakon; Anders, Andre & Yodsombat, Banchob. Electrical properties of a-C:Mo films produced by dual-cathode filtered cathodic arc plasma deposition, article, January 20, 2008; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc900328/: accessed November 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.