Physics of Plasma-Based Ion Implantation&Deposition (PBIID)and High Power Impulse Magnetron Sputtering (HIPIMS): A Comparison

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The emerging technology of High Power Impulse MagnetronSputtering (HIPIMS) has much in common with the more establishedtechnology of Plasma Based Ion Implantation&Deposition (PBIID):both use pulsed plasmas, the pulsed sheath periodically evolves andcollapses, the plasma-sheath system interacts with the pulse-drivingpower supply, the plasma parameters are affected by the power dissipated,surface atoms are sputtered and secondary electrons are emitted, etc.Therefore, both fields of science and technology could learn from eachother, which has not been fully explored. On the other hand, there aresignificant differences, too. Most importantly, the operation of HIPIMSheavilyrelies on the presence of a strong magnetic field, confiningelectrons and causing their ... continued below

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Anders, Andre August 28, 2007.

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Description

The emerging technology of High Power Impulse MagnetronSputtering (HIPIMS) has much in common with the more establishedtechnology of Plasma Based Ion Implantation&Deposition (PBIID):both use pulsed plasmas, the pulsed sheath periodically evolves andcollapses, the plasma-sheath system interacts with the pulse-drivingpower supply, the plasma parameters are affected by the power dissipated,surface atoms are sputtered and secondary electrons are emitted, etc.Therefore, both fields of science and technology could learn from eachother, which has not been fully explored. On the other hand, there aresignificant differences, too. Most importantly, the operation of HIPIMSheavilyrelies on the presence of a strong magnetic field, confiningelectrons and causing their ExB drift, which is closed for typicalmagnetron configurations. Second, at the high peak power levels used forHIPIMS, 1 kW/cm2 or greater averaged over the target area, the sputteredmaterial greatly affects plasma generation. For PBIID, in contrast,plasma generation and ion processing of the surface (ion implantation,etching, and deposition) are considered rela-tively independentprocesses. Third, secondary electron emission is generally considered anuisance for PBIID, especially at high voltages, whereas it is a criticalingredient to the operation of HIPIMS. Fourth, the voltages in PBIID areoften higher than in HIPIMS. For the first three reasons listed above,modelling of PBIID seems to be easier and could give some guidance forfuture HIPIMS models, which, clearly, will be more involved.

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  • Journal Name: physica status solidi; Journal Volume: 205; Journal Issue: 4; Related Information: Journal Publication Date: 2008

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  • Report No.: LBNL--62578
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 928492
  • Archival Resource Key: ark:/67531/metadc900258

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  • August 28, 2007

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  • Sept. 27, 2016, 1:39 a.m.

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  • Nov. 30, 2016, 4:45 p.m.

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Anders, Andre. Physics of Plasma-Based Ion Implantation&Deposition (PBIID)and High Power Impulse Magnetron Sputtering (HIPIMS): A Comparison, article, August 28, 2007; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc900258/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.