Substrate-induced band gap opening in epitaxial graphene Page: 1 of 14
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Substrate-induced band gap opening in epitaxial graphene
S.Y. Zhou,',2 G.-H. Gweon,' * A.V. Fedorov,3 P.N. First,4 W.A. de Heer,'
D.-H. Lee,' F. Guinea,5 A.H. Castro Neto,6 and A. Lanzara',2
'Department of Physics, University of California, Berkeley, CA 94720, USA
2Materials Sciences Division, Lawrence Berkeley
National Laboratory, Berkeley, CA 94720, USA
'Advanced Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, USA
4School of Physics, Georgia Institute of Technology, Atlanta, GA 30332-0430
5Instituto de Ciencia de Materiales de Madrid,
CSIC, Cantoblanco, E-28049 Madrid, Spain.
'Department of Physics, Boston University,
590 Commonwealth Avenue, Boston, MA 02215, USA
(Dated: November 18, 2007)*Present address:Department of Physics, University of California, Santa Cruz, California 95064, USA
1
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Zhou, S. Y.; Gweon, G.-H.; Fedorov, A. V.; First, P. N.; de Heer, W. A.; Lee, D.-H. et al. Substrate-induced band gap opening in epitaxial graphene, article, September 8, 2007; Berkeley, California. (https://digital.library.unt.edu/ark:/67531/metadc900180/m1/1/: accessed April 23, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.