Substrate-induced band gap opening in epitaxial graphene

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Graphene has shown great application potential as the hostmaterial for next-generation electronic devices. However, despite itsintriguing properties, one of the biggest hurdles for graphene to beuseful as an electronic material is the lack of an energy gap in itselectronic spectra. This, for example, prevents the use of graphene inmaking transistors. Although several proposals have been made to open agap in graphene's electronic spectra, they all require complexengineering of the graphene layer. Here, we show that when graphene isepitaxially grown on SiC substrate, a gap of ~;0.26 eV is produced. Thisgap decreases as the sample thickness increases and eventually approacheszero when ... continued below

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Zhou, S. Y.; Gweon, G.-H.; Fedorov, A. V.; First, P. N.; de Heer, W. A.; Lee, D.-H. et al. September 8, 2007.

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Description

Graphene has shown great application potential as the hostmaterial for next-generation electronic devices. However, despite itsintriguing properties, one of the biggest hurdles for graphene to beuseful as an electronic material is the lack of an energy gap in itselectronic spectra. This, for example, prevents the use of graphene inmaking transistors. Although several proposals have been made to open agap in graphene's electronic spectra, they all require complexengineering of the graphene layer. Here, we show that when graphene isepitaxially grown on SiC substrate, a gap of ~;0.26 eV is produced. Thisgap decreases as the sample thickness increases and eventually approacheszero when the number of layers exceeds four. We propose that the originof this gap is the breaking of sublattice symmetry owing to thegraphene-substrate interaction. We believe that our results highlight apromising direction for band gap engineering of graphene.

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  • Journal Name: Nature Materials; Journal Volume: 6; Related Information: Journal Publication Date: Sept 9, 2007

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  • Report No.: LBNL--63527
  • Grant Number: DE-AC02-05CH11231
  • Grant Number: NSF:DMR03-49361
  • DOI: 10.1038/nmat2056 | External Link
  • Office of Scientific & Technical Information Report Number: 932987
  • Archival Resource Key: ark:/67531/metadc900180

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • September 8, 2007

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  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 3, 2017, 2:02 p.m.

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Zhou, S. Y.; Gweon, G.-H.; Fedorov, A. V.; First, P. N.; de Heer, W. A.; Lee, D.-H. et al. Substrate-induced band gap opening in epitaxial graphene, article, September 8, 2007; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc900180/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.