EUV mask reflectivity measurements with micro-scale spatial resolution

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The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. They describe the unique measurement capabilities of a prototype actinic (EUV) wavelength microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity ... continued below

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Goldberg, Kenneth A.; Rekawa, Senajith B.; Kemp, Charles D.; Barty, Anton; Anderson, Erik; Kearney, Patrick et al. February 1, 2008.

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The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. They describe the unique measurement capabilities of a prototype actinic (EUV) wavelength microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity of the multilayer coating. This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. They describe the role of actinic scanning inspection in defect repair studies, observations of laser damage, actinic inspection following scanning electron microscopy, and the detection of both native and programmed defects.

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  • SPIE Emerging Lithographic Technologies XII, San Jose, CA, February 26-28, 2008

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  • Report No.: LBNL-1104E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 940567
  • Archival Resource Key: ark:/67531/metadc900152

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • February 1, 2008

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 2, 2017, 12:40 p.m.

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Goldberg, Kenneth A.; Rekawa, Senajith B.; Kemp, Charles D.; Barty, Anton; Anderson, Erik; Kearney, Patrick et al. EUV mask reflectivity measurements with micro-scale spatial resolution, article, February 1, 2008; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc900152/: accessed December 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.