Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

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We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct ... continued below

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8 p.

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Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J. et al. May 1, 2008.

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We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.

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8 p.

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  • Presented at the 33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008, San Diego, California

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  • Report No.: NREL/CP-520-42547
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 929610
  • Archival Resource Key: ark:/67531/metadc900003

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  • May 1, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • April 6, 2017, 2:04 p.m.

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Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J. et al. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint, article, May 1, 2008; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc900003/: accessed October 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.