Defect Doping of InN

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InN films grown by molecular beam epitaxy have been subjected to 2 MeV He{sup +} irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be used to produce samples with electron mobilities higher than those of as grown films.

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Jones, R.E.; van Genuchten, H.C.M.; Yu, K.M.; Walukiewicz, W.; Li, S.X.; A ger III, J.W. et al. July 22, 2007.

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InN films grown by molecular beam epitaxy have been subjected to 2 MeV He{sup +} irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be used to produce samples with electron mobilities higher than those of as grown films.

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  • 26th International Conference on the Physics ofSemiconductors (ICPS-26), Vienna, Austria, July 22-26,2006

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  • Report No.: LBNL--63011
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 927385
  • Archival Resource Key: ark:/67531/metadc899934

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  • July 22, 2007

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  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 31, 2016, 3:49 p.m.

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Jones, R.E.; van Genuchten, H.C.M.; Yu, K.M.; Walukiewicz, W.; Li, S.X.; A ger III, J.W. et al. Defect Doping of InN, article, July 22, 2007; (digital.library.unt.edu/ark:/67531/metadc899934/: accessed October 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.