Deprotection blue in extreme ultraviolet photoresists: influence of base loading and post-exposure bake temperture

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The deprotection blur of Rohm and Haas XP 5435, XP 5271, and XP5496 extreme ultraviolet photoresists has been determined as their base weight percent is varied. They have also determined the deprotection blur of TOK EUVR P1123 photoresist as the post-exposure bake temperature is varied from 80 C to 120 C. In Rohm and Haas XP 5435 and XP5271 resists 7x and 3x (respective) increases in base weight percent reduce the size of successfully patterned 1:1 line-space features by 16 nm and 8 nm with corresponding reductions in deprotection blur of 7 nm and 4 nm. In XP 5496 a ... continued below

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Anderson, Christopher N. & Naulleau, Patrick P. June 2, 2008.

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The deprotection blur of Rohm and Haas XP 5435, XP 5271, and XP5496 extreme ultraviolet photoresists has been determined as their base weight percent is varied. They have also determined the deprotection blur of TOK EUVR P1123 photoresist as the post-exposure bake temperature is varied from 80 C to 120 C. In Rohm and Haas XP 5435 and XP5271 resists 7x and 3x (respective) increases in base weight percent reduce the size of successfully patterned 1:1 line-space features by 16 nm and 8 nm with corresponding reductions in deprotection blur of 7 nm and 4 nm. In XP 5496 a 7x increase in base weight percent reduces the size of successfully patterned 1:1 line-space features from 48 nm to 38 nm without changing deprotection blur. In TOK EUVR P1123 resist, a reduction in post-exposure bake temperature from 100 C to 80 C reduces deprotection blur from 21 nm to 10 nm and reduces patterned LER from 4.8 nm to 4.1 nm.

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  • Journal Name: JVST B

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  • Report No.: LBNL-1154E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 941690
  • Archival Resource Key: ark:/67531/metadc899630

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  • June 2, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 2, 2017, 12:37 p.m.

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Anderson, Christopher N. & Naulleau, Patrick P. Deprotection blue in extreme ultraviolet photoresists: influence of base loading and post-exposure bake temperture, article, June 2, 2008; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc899630/: accessed June 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.