Wafer Preparation and Iodine-Ethanol Passivation Procedure for Reproducible Minority-Carrier Lifetime Measurement (Poster)

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Measurement of the bulk minority-carrier lifetime (T{sub b}) by optical methods, such as photocurrent decay or quasi-steady-state photoconductance (QSSPC), is strongly influenced by surface recombination. Several techniques are known to lower the effective surface recombination velocity, including the following: use of oxidation, floating N/P junction, SiN:H layer, HF immersion, and use of iodine in ethanol or methanol (I-E solution). Using I-E appears to be very simple and does not require any high-temperature treatment such as oxidation, diffusion, or nitridation processes, which can change T{sub b}. However, this is not a preferred procedure within the photovoltaic community because it is difficult ... continued below

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Sopori, B.; Rupnowski, P.; Appel, J.; Mehta, V.; Li, C. & Johnston, S. May 1, 2008.

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Measurement of the bulk minority-carrier lifetime (T{sub b}) by optical methods, such as photocurrent decay or quasi-steady-state photoconductance (QSSPC), is strongly influenced by surface recombination. Several techniques are known to lower the effective surface recombination velocity, including the following: use of oxidation, floating N/P junction, SiN:H layer, HF immersion, and use of iodine in ethanol or methanol (I-E solution). Using I-E appears to be very simple and does not require any high-temperature treatment such as oxidation, diffusion, or nitridation processes, which can change T{sub b}. However, this is not a preferred procedure within the photovoltaic community because it is difficult to obtain same T{sub b} values reproducibly, particularly when the wafer lifetime is long. The objectives are: (1) Investigate various reasons why lifetime measurements may be irreproducible using I-E solution passivation. (2) Study the influence of the strength of iodine in the ethanol solution, wafer-cleaning procedures, influence of the wafer container during lifetime measurements, and the stability of I-E. (3) Compare lifetimes of wafers (having different T{sub b}) by various techniques such as QSSPC and transient photoconductive decay using short laser pulses of different light intensity; (4) Make minority-carrier diffusion length (L) measurements by a surface photovoltage technique, and to use T{sub b} and L data to determine diffusivity (D) values for various impurity and defect concentrations, using the relationship L{sup 2} = D* T{sub b}.

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1 p.

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  • Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008, San Diego, California

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  • Report No.: NREL/PO-520-43322
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 939519
  • Archival Resource Key: ark:/67531/metadc899551

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  • May 1, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • Dec. 8, 2016, 1:47 p.m.

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Sopori, B.; Rupnowski, P.; Appel, J.; Mehta, V.; Li, C. & Johnston, S. Wafer Preparation and Iodine-Ethanol Passivation Procedure for Reproducible Minority-Carrier Lifetime Measurement (Poster), article, May 1, 2008; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc899551/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.