TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates

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Transmission electron microscopy (TEM) was used to study pendeo-epitaxial GaN layers grown on polar and non-polar 4H SiC substrates. The structural quality of the overgrown layers was evaluated using a number of TEM methods. Growth of pendeo-epitaxial layers on polar substrates leads to better structural quality of the overgrown areas, however edge-on dislocations are found at the meeting fronts of two wings. Some misorientation between the 'seed' area and wing area was detected by Convergent Beam Electron Diffraction. Growth of pendeo-epitaxial layers on non-polar substrates is more difficult. Two wings on the opposite site of the seed area grow in ... continued below

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Liliental-Weber, Z.; Ni, X. & Morkoc, H. January 5, 2006.

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Transmission electron microscopy (TEM) was used to study pendeo-epitaxial GaN layers grown on polar and non-polar 4H SiC substrates. The structural quality of the overgrown layers was evaluated using a number of TEM methods. Growth of pendeo-epitaxial layers on polar substrates leads to better structural quality of the overgrown areas, however edge-on dislocations are found at the meeting fronts of two wings. Some misorientation between the 'seed' area and wing area was detected by Convergent Beam Electron Diffraction. Growth of pendeo-epitaxial layers on non-polar substrates is more difficult. Two wings on the opposite site of the seed area grow in two different polar directions with different growth rates. Most dislocations in a wing grown with Ga polarity are 10 times wider than wings grown with N-polarity making coalescence of these layers difficult. Most dislocations in a wing grown with Ga polarity bend in a direction parallel to the substrate, but some of them also propagate to the sample surface. Stacking faults formed on the c-plane and prismatic plane occasionally were found. Some misorientation between the wings and seed was detected using Large Angle Convergent Beam Diffraction.

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  • Photonic West SPIE-The International Society forOptical Engineering, San Jose, CA, 1/22-1-16/06

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  • Report No.: LBNL--60794
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 920343
  • Archival Resource Key: ark:/67531/metadc899433

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  • January 5, 2006

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  • Sept. 27, 2016, 1:39 a.m.

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  • Dec. 9, 2016, 9:47 p.m.

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Liliental-Weber, Z.; Ni, X. & Morkoc, H. TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates, article, January 5, 2006; (digital.library.unt.edu/ark:/67531/metadc899433/: accessed September 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.