A fully 3D atomistic quantum mechanical study on random dopant induced effects in 25nm MOSFETs

PDF Version Also Available for Download.

Description

We present a fully 3D atomistic quantum mechanical simulation for nanometered MOSFET using a coupled Schroedinger equation and Poisson equation approach. Empirical pseudopotential is used to represent the single particle Hamiltonian and linear combination of bulk band (LCBB) method is used to solve the million atom Schroedinger's equation. We studied gate threshold fluctuations and threshold lowering due to the discrete dopant configurations. We compared our results with semiclassical simulation results. We found quantum mechanical effects increase the threshold fluctuation while decreases the threshold lowering. The increase of threshold fluctuation is in agreement with previous study based on approximated density gradient ... continued below

Creation Information

Wang, Lin-Wang; Jiang, Xiang-Wei; Deng, Hui-Xiong; Luo, Jun-Wei; Li, Shu-Shen; Wang, Lin-Wang et al. July 11, 2008.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

We present a fully 3D atomistic quantum mechanical simulation for nanometered MOSFET using a coupled Schroedinger equation and Poisson equation approach. Empirical pseudopotential is used to represent the single particle Hamiltonian and linear combination of bulk band (LCBB) method is used to solve the million atom Schroedinger's equation. We studied gate threshold fluctuations and threshold lowering due to the discrete dopant configurations. We compared our results with semiclassical simulation results. We found quantum mechanical effects increase the threshold fluctuation while decreases the threshold lowering. The increase of threshold fluctuation is in agreement with previous study based on approximated density gradient approach to represent the quantum mechanical effect. However, the decrease in threshold lowering is in contrast with the previous density gradient calculations.

Source

  • Journal Name: IEEE Transactions on electron devices; Journal Volume: 55; Related Information: Journal Publication Date: 2008

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LBNL-723E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 935712
  • Archival Resource Key: ark:/67531/metadc898490

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • July 11, 2008

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

Description Last Updated

  • Nov. 8, 2016, 1:12 p.m.

Usage Statistics

When was this article last used?

Congratulations! It looks like you are the first person to view this item online.

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Wang, Lin-Wang; Jiang, Xiang-Wei; Deng, Hui-Xiong; Luo, Jun-Wei; Li, Shu-Shen; Wang, Lin-Wang et al. A fully 3D atomistic quantum mechanical study on random dopant induced effects in 25nm MOSFETs, article, July 11, 2008; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc898490/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.