Stark Tuning of Donor Electron Spins of Silicon Page: 1 of 10
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Stark Tuning of Donor Electron Spins in Silicon
Forrest R. Bradbury', Alexei M. Tyryshkin', Guillaume Sabouret', Jeff Bokor2,3,
Thomas Schenkel2, Stephen A. Lyon'
IDepartment of Electrical Engineering, Princeton University, Princeton, NJ 08544
2E. O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720
3Department of Electrical Engineering and Computer Science, University of California
Berkeley, CA 94720
Corresponding author: bradburygprinceton.edu
PACS: 71.70.Ej, 76.30.-v, 03.67.Lx, 71.55.Cn
Abstract:
We report Stark shift measurements for 12Sb donor electron spins in silicon using pulsed
electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are
used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine
coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-
factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term
is expected to dominate at higher magnetic fields. A significant linear Stark effect is also
resolved presumably arising from strain.
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Bradbury, Forrest R.; Tyryshkin, Alexei M.; Sabouret, Guillaume; Bokor, Jeff; Schenkel, Thomas & Lyon, Stephen A. Stark Tuning of Donor Electron Spins of Silicon, article, March 23, 2006; United States. (https://digital.library.unt.edu/ark:/67531/metadc898428/m1/1/: accessed April 23, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.