Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

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Description

This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been ... continued below

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39 p.

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Atwater, H. A. November 1, 2007.

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Description

This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

Physical Description

39 p.

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  • Related Information: Work performed by California Institute of Technology, Pasadena, California

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  • Report No.: NREL/SR-520-42325
  • Grant Number: AC36-99-GO10337
  • DOI: 10.2172/919971 | External Link
  • Office of Scientific & Technical Information Report Number: 919971
  • Archival Resource Key: ark:/67531/metadc898209

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • November 1, 2007

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

Description Last Updated

  • April 5, 2017, 7:06 p.m.

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Atwater, H. A. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007, report, November 1, 2007; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc898209/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.