Improving the Efficiency of Solid State Light Sources

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Description

This proposal addresses the national need to develop a high efficiency light source for general illumination applications. The goal is to perform research that would lead to the fabrication of a unique solid state, white-emitting light source. This source is based on an InGaN/GaN UV-emitting chip that activates a luminescent material (phosphor) to produce white light. White-light LEDs are commercially available which use UV from a GaN chip to excite a phosphor suspended in epoxy around the chip. Currently, these devices are relatively inefficient. This research will target one technical barrier that presently limits the efficiency of GaN based devices. ... continued below

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McKittrick, Joanna March 31, 2003.

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Description

This proposal addresses the national need to develop a high efficiency light source for general illumination applications. The goal is to perform research that would lead to the fabrication of a unique solid state, white-emitting light source. This source is based on an InGaN/GaN UV-emitting chip that activates a luminescent material (phosphor) to produce white light. White-light LEDs are commercially available which use UV from a GaN chip to excite a phosphor suspended in epoxy around the chip. Currently, these devices are relatively inefficient. This research will target one technical barrier that presently limits the efficiency of GaN based devices. Improvements in efficiencies will be achieved by improving the internal conversion efficiency of the LED die, by improving the coupling between the die and phosphor(s) to reduce losses at the surfaces, and by selecting phosphors to maximize the emissions from the LEDs in conversion to white light. The UCSD research team proposes for this project to develop new phosphors that have high quantum efficiencies that can be activated by the UV-blue (360-410 nm) light emitted by the GaN device. The main goal for the UCSD team was to develop new phosphor materials with a very specific property: phosphors that could be excited at long UV-wavelengths ({lambda}=350-410 nm). The photoluminescence of these new phosphors must be activated with photons emitted from GaN based dies. The GaN diodes can be designed to emit UV-light in the same range ({lambda}=350-410 nm). A second objective, which is also very important, is to search for alternate methods to fabricate these phosphors with special emphasis in saving energy and time and reduce pollution.

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  • Report No.: None
  • Grant Number: FC26-01NT41202
  • DOI: 10.2172/928839 | External Link
  • Office of Scientific & Technical Information Report Number: 928839
  • Archival Resource Key: ark:/67531/metadc898039

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • March 31, 2003

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

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  • Dec. 5, 2016, 8:51 p.m.

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McKittrick, Joanna. Improving the Efficiency of Solid State Light Sources, report, March 31, 2003; United States. (digital.library.unt.edu/ark:/67531/metadc898039/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.