Identifying the Electronic Properties Relevant to Improving the Performance of High Band-Gap Copper Based I-III-VI2 Chalcopyrite Thin Film Photovoltaic Devices: Final Subcontract Report, 27 April 2004-15 September 2007 Metadata

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Title

  • Main Title Identifying the Electronic Properties Relevant to Improving the Performance of High Band-Gap Copper Based I-III-VI2 Chalcopyrite Thin Film Photovoltaic Devices: Final Subcontract Report, 27 April 2004-15 September 2007

Creator

  • Author: Cohen, J. D.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization

Publisher

  • Name: National Renewable Energy Laboratory (U.S.)
    Place of Publication: Golden, Colorado
    Additional Info: National Renewable Energy Laboratory (NREL), Golden, CO.

Date

  • Creation: 2008-08-01

Language

  • English

Description

  • Content Description: This report summarizes the development and evaluation of higher-bandgap absorbers in the CIS alloy system. The major effort focused on exploring suitable absorbers with significant sulfur alloying in collaboration with Shafarman's group at the Institute of Energy Conversion. Three series of samples were examined; first, a series of quaternary CuIn(SeS)2-based devices without Ga; second, a series of devices with pentenary Cu(InGa)(SeS)2 absorbers in which the Se-to-S and In-to-Ga ratios were chosen to keep the bandgap nearly constant, near 1.52 eV. Third, based on the most-promising samples in those two series, we examined a series of devices with pentenary Cu(InGa)(SeS)2 absorbers with roughly 25 at.% S/(Se+S) ratios and varying Ga fractions. We also characterized electronic properties of several wide-bandgap CuGaSe2 devices from both IEC and NREL. The electronic properties of these absorbers were examined using admittance spectroscopy, drive-level capacitance profiling, transient photocapacitance, and transient photocurrent optical spectroscopies. The sample devices whose absorbers had Ga fraction below 40 at.% and S fractions above 20 at.% but below 40% exhibited the best electronic properties and device performance.
  • Physical Description: 76 pp.

Subject

  • Keyword: Pv
  • Keyword: Transients Pv
  • STI Subject Categories: 36 Materials Science
  • Keyword: Thin Films
  • Keyword: Cigs
  • Keyword: Devices
  • Keyword: Drive-Level Capacitance Profiling
  • Keyword: Energy Conversion
  • Keyword: Electronic Properties
  • Keyword: Chalcopyrite
  • Keyword: Thin Film
  • Keyword: Copper
  • STI Subject Categories: 14 Solar Energy
  • Keyword: Cis Alloys
  • Keyword: High Bandgap
  • Keyword: Spectroscopy
  • Keyword: Transient Photocapacitance
  • Keyword: Photocurrents
  • Keyword: Admittance Spectroscopy
  • Keyword: Alloy Systems
  • Keyword: Solar Energy - Photovoltaics
  • Keyword: Capacitance
  • Keyword: Sulfur
  • Keyword: Evaluation
  • Keyword: Performance

Source

  • Related Information: Work performed by University of Oregon, Eugene, Oregon

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Report

Format

  • Text

Identifier

  • Report No.: NREL/SR-520-43909
  • Grant Number: AC36-99-GO10337
  • DOI: 10.2172/937345
  • Office of Scientific & Technical Information Report Number: 937345
  • Archival Resource Key: ark:/67531/metadc897557