Identifying the Electronic Properties Relevant to Improving the Performance of High Band-Gap Copper Based I-III-VI2 Chalcopyrite Thin Film Photovoltaic Devices: Final Subcontract Report, 27 April 2004-15 September 2007 Page: 47 of 76
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FIG. 29. Copy of a screen plot
from the modeling program showing
an example of the types of spatial
distribution of shallow and deep
acceptors that can be selected. In
this case, the shallow acceptor
density was chosen to be 5, 2, and
3 x 10 5cm-3 for the interiors of the 3
regions, respectively, (moving away
from the barrier) and the deep
acceptor density was chosen to be 3,
1, and 2 x 101 cm-3 for the same 3
regions. The length scales that mix
the properties at the two interfaces
were 0.05 microns for the interface
near 0.25 microns, and 0.2 microns
for the interface near 1.0 microns.Shallow Density <green> - Deep Density <red>
16
158Log Density
154
152
150-------
D stance from BarrnerDC bias even though it cannot respond dynamically at the applied frequency. In Fig. 30(b) we
show the simulated response at lower frequencies where the deep acceptor can respond fully. In
this case both the DLCP and CV profiles appear nearly identical. However, neither provides an
accurate picture of the true spatial variation of the states within the absorber. Actually, the
measurement profiles do a pretty good job reproducing the true variation in the vicinity of the
farther interface where the spatial dependence is relatively small, but they differ dramatically
from the true spatial variation near the interface where the electronic properties are changing
rapidly. This example clearly demonstrates the need for detailed numerical modeling when such
more rapid variations in the spatial properties are present, such as those observed close to theDrive Level and C-V Density
(b)
_og DensityDrive Level and C-V Density
Distance from Barrier
FIG. 30. Examples of calculated DLCP (red) and CV profiles (blue) for the model electronic
properties shown in Fig. 29. Here (a) corresponds to a higher frequency measurement where
the thermal response energy is 0.35eV, while (b) corresponds to a lower frequency
measurement where the response energy is 0.45eV. The green curve shows the actual spatial
variation of the charge density that will respond at 0.35eV and 0.45eV, respectively, from the
assumed deep and shallow acceptor distributions.35
125 ,
(a)
_og Density,16 - - F-
______ - _______ ______ __-_____-_ I -____ _15 1
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Cohen, J. D. Identifying the Electronic Properties Relevant to Improving the Performance of High Band-Gap Copper Based I-III-VI2 Chalcopyrite Thin Film Photovoltaic Devices: Final Subcontract Report, 27 April 2004-15 September 2007, report, August 1, 2008; Golden, Colorado. (https://digital.library.unt.edu/ark:/67531/metadc897557/m1/47/: accessed April 24, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.