Characterization of chemical bonding in low-k dielectric materialsfor interconnect isolation: a xas and eels study

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The use of low dielectric constant materials in the on-chipinterconnect process reduces interconnect delay, power dissipation andcrosstalk noise. To achieve the requirements of the ITRS for 2007-2009minimal sidewall damage from etch, ash or cleans is required. In chemicalvapor deposited (CVD) organo-silicate glass (OSG) which are used asintermetal dielectric (IMD) materials the substitution of oxygen in SiO2by methyl groups (-CH3) reduces the permittivity significantly (from 4.0in SiO2 to 2.6-3.3 in the OSG), since the electronic polarizability islower for Si-C bonds than for Si-O bonds. However, plasma processing forresist stripping, trench etching and post-etch cleaning removes C and Hcontaining molecular groups from ... continued below

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Hoffmann, P.; Schmeisser, D.; Engelmann, H.-J.; Zschech, E.; Stegmann, H.; Himpsel, F. et al. April 10, 2006.

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The use of low dielectric constant materials in the on-chipinterconnect process reduces interconnect delay, power dissipation andcrosstalk noise. To achieve the requirements of the ITRS for 2007-2009minimal sidewall damage from etch, ash or cleans is required. In chemicalvapor deposited (CVD) organo-silicate glass (OSG) which are used asintermetal dielectric (IMD) materials the substitution of oxygen in SiO2by methyl groups (-CH3) reduces the permittivity significantly (from 4.0in SiO2 to 2.6-3.3 in the OSG), since the electronic polarizability islower for Si-C bonds than for Si-O bonds. However, plasma processing forresist stripping, trench etching and post-etch cleaning removes C and Hcontaining molecular groups from the near-surface layer of OSG.Therefore, compositional analysis and chemical bonding characterizationof structured IMD films with nanometer resolution is necessary forprocess optimization. OSG thin films as-deposited and after plasmatreatment are studied using X-ray absorption spectroscopy (XAS) andelectron energy loss spectroscopy (EELS). In both techniques, the finestructure near the C1s absorption or energy loss edge, respectively,allows to identify C-H, C-C, and C-O bonds. This gives the opportunity todifferentiate between individual low-k materials and their modifications.The O1s signal is less selective to individual bonds. XAS spectra havebeen recorded for non-patterned films and EELS spectra for patternedstructures. The chemical bonding is compared for as-deposited andplasma-treated low-k materials. The Fluorescence Yield (FY) and the TotalElectron Yield (TEY) recorded while XAS measurement are compared.Examination of the C 1s near-edge structures reveal a modified bonding ofthe remaining C atoms in the plasma-treated sample regions.

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  • 2006 MRS Spring Meeting, San Francisco,California, April 17-21, 2006

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  • Report No.: LBNL--63055
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 929364
  • Archival Resource Key: ark:/67531/metadc897450

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  • April 10, 2006

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  • Sept. 27, 2016, 1:39 a.m.

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Hoffmann, P.; Schmeisser, D.; Engelmann, H.-J.; Zschech, E.; Stegmann, H.; Himpsel, F. et al. Characterization of chemical bonding in low-k dielectric materialsfor interconnect isolation: a xas and eels study, article, April 10, 2006; (digital.library.unt.edu/ark:/67531/metadc897450/: accessed July 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.