High Electron Mobility InN Page: 3 of 14
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corresponding electron mobilities from 1100 to 500 cm2/Vs. In order to predictably generate
native point defects, the films were irradiated with 2 MeV He+ ions. The irradiation fluences
ranged from 1.1x101 to 8.9x101 cm-2. The irradiation produced nearly uniform damage across
the film thickness and the end of range for the 2 MeV He+ ions was in the substrate.
Rapid thermal annealing was performed sequentially on each sample to eliminate effects
of inhomogeneity between samples. A Heatpulse 10T-02 Rapid Thermal Pulsing System with
flowing N2 gas was used. The films were annealed first at 375 C and/or 425 C for increasing
time intervals from 10 to 300 seconds. Subsequent annealing was performed for the same
increasing time intervals at 475 C. Annealing temperatures of 5000C and higher caused film
delamination, as did repeated annealing for times longer than one hour at 475 C. The onset of
delamination determined the endpoint of the annealing treatments. No data was used from films
once delamination began to occur.
The electrical properties of the films were measured at room temperature by the Hall
effect with a 3000 Gauss magnet, using indium contacts in the van der Pauw configuration. The
contacts were removed prior to annealing by etching in HCl. Photoluminescence (PL) signals
were generated in the backscattering geometry with excitation by the 515 nm line of an argon
laser. The signals were dispersed by a one meter double-grating monochromator and detected by
a liquid-nitrogen-cooled germanium photodiode.
High-energy particle irradiation has been shown to be an effective method for controlling
the electronic properties in InN films [2, 5, 6]. There is a linear relationship between electron
concentration (n) and 2 MeV He+ ion fluence, with an electron production rate of about 4x104
electrons (ion-cm)1 up to a saturation concentration of ~4x1020 cm-3. Further, modeling of
electron mobility (p) vs. n data has shown that p in irradiated films is controlled by scattering by
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Jones, R.E.; Li, S.X.; Haller, E.E.; van Genuchten, H.C.M.; Yu,K.M.; Ager III, J.W. et al. High Electron Mobility InN, article, February 6, 2007; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc897421/m1/3/: accessed February 17, 2019), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.