High Electron Mobility InN Page: 1 of 14
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High Electron Mobility InN
R.E. Jones, S.X. Li, E.E. Haller
Materials Sciences Division, Lawrence Berkeley National Laboratory and Dept. of Materials
Science and Engineering, University of California, Berkeley, CA 94720 USA
H.C.M. van Genuchten, K.M. Yu, J.W. Ager III, Z. Liliental-Weber, W. Walukiewicz
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 USA
H. Lu and W.J. Schaff
Dept. of Electrical Engineering and Computer Science, Cornell University, Ithaca, NY 14853
Irradiation of InN films with 2 MeV He+ ions followed by thermal annealing below 500 C
creates films with high electron concentration and mobility, as well as strong
photoluminescence. Calculations show that electron mobility in irradiated samples is limited by
triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects,
decreasing the electron concentration. There is a large increase in electron mobility upon
annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times
smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to
cause the unusual increase in electron mobility.
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Jones, R.E.; Li, S.X.; Haller, E.E.; van Genuchten, H.C.M.; Yu,K.M.; Ager III, J.W. et al. High Electron Mobility InN, article, February 6, 2007; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc897421/m1/1/: accessed February 19, 2019), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.