Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling

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A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons, and is large enough to produce a near fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6 nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation [R. Schiller et al., Phys. Rev. Lett. 86, 3847 (2001)].

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Santos, T. S.; Moodera, J. S.; Venkataraman, K.; Negusse, E.; Holroyd, J.; Dvorak, J. et al. June 24, 2008.

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A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons, and is large enough to produce a near fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6 nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation [R. Schiller et al., Phys. Rev. Lett. 86, 3847 (2001)].

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  • Journal Name: Physical Review Letters; Journal Volume: 101

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  • Report No.: LBNL-1058E
  • Grant Number: DE-AC02-05CH11231
  • DOI: 10.1103/PhysRevLett.101.147201 | External Link
  • Office of Scientific & Technical Information Report Number: 941425
  • Archival Resource Key: ark:/67531/metadc897092

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  • June 24, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • Jan. 4, 2017, 3:33 p.m.

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Santos, T. S.; Moodera, J. S.; Venkataraman, K.; Negusse, E.; Holroyd, J.; Dvorak, J. et al. Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling, article, June 24, 2008; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc897092/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.