SEMATECH EUV resist benchmarking results

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Description

Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for next generation lithography technology for the 32 nm HP and beyond. The availability of EUV resists is one of the most significant challenges facing its commercialization. To accelerate EUV resist development, SEMATECH provides access to two exposure tools: (1) The EUV Resist Test Center (RTC) at SEMATECH at the University at Albany, SUNY, NY; and (2) the SEMATECH microexposure tools (ALS-MET) at Lawrence Berkeley National Laboratory (LBNL).

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Ma, Andy; Park, Joo-On; Dean, Kim; Wurm, Stefan & Naulleau, Patrick October 27, 2007.

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Description

Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for next generation lithography technology for the 32 nm HP and beyond. The availability of EUV resists is one of the most significant challenges facing its commercialization. To accelerate EUV resist development, SEMATECH provides access to two exposure tools: (1) The EUV Resist Test Center (RTC) at SEMATECH at the University at Albany, SUNY, NY; and (2) the SEMATECH microexposure tools (ALS-MET) at Lawrence Berkeley National Laboratory (LBNL).

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  • 2007 International EUVL Symposium, Sapporo,Japan, Oct. 28-31, 2007

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  • Report No.: LBNL--63519
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 932532
  • Archival Resource Key: ark:/67531/metadc897060

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  • October 27, 2007

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  • Sept. 27, 2016, 1:39 a.m.

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Ma, Andy; Park, Joo-On; Dean, Kim; Wurm, Stefan & Naulleau, Patrick. SEMATECH EUV resist benchmarking results, article, October 27, 2007; United States. (digital.library.unt.edu/ark:/67531/metadc897060/: accessed August 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.